Disc Devices

Fast Thyristors

Features

Low switching losses
Low reverse recovery charge
High power cycling capability
Distributed amplified gate for high diT/dt

Blocking Voltage — up to 3600V
Type
Device
VDRM
VRRM
ITAV VT(TO) rT tq Qrr trr Tj max Rthjc Package
(TC, °C) Tjmax Tjmax AC
Type

∅max/
∅active/
height
[V] [A] [V] [mΩ] [μs] [μC] [μs] [°C] [°C/W] [mm]
pdf TFI353-700 3000÷3400 700(87) 1,50 0,500 40,0 770 7,00 120 0,0200 T.D3 74/50/26
pdf TFI353-800 3000÷3400 800(80) 1,30 0,700 63,0 1000 8,00 125 0,0210 T.D3 74/50/26
pdf TFI933-250 3000÷3600 250(97) 2,00 1,200 50,0 500 5,00 125 0,0400 T.B2 42/25/14
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! Devices marked by this symbol are not recommended to apply in any new projects
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Example of Code Designation

TFI 133 - 400 - 12 - A2 B4 - 14 - K4 - N
1 2 3 4 5 6 7 8 9
  1. TFI — Fast Thyristor
    TFIS — Fast Thyristor with Distributed Amplified Gate
  2. Design Version
  3. Average On-state Current, A
  4. Voltage Code
  5. Critical rate of rise of off-state voltage
  6. Group of turn-off time
  7. Group of recovery charge
  8. Group of reverse recovery time
  9. Ambient Conditions:
    N — Normal
    T — Tropical

Group of Turn-Off Time

Turn-Off Time, μs 3.2 5.0 6.3 8.0 10 12.5 16 20 25 32 40 50 63 80 100 125 160 200 250
Group Symbol K4 E4 C4 B4 A4 X3 T3 P3 M3 K3 H3 E3 C3 B3 A3 X2 T2 P2 M2