Proton-Electrotex

Technical Information

29.11.2007 | Serial and Parallel Connection of Power Semiconductor Devices

While connecting thyristors or diodes in series it is necessary to target to distribute blocking voltage (direct and/or reverse) equally both in the static and dynamic modes, i. e. while turn-on thyristors and while recovering blocking parameters at turn-off a thyristor or a diode...........

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29.11.2007 | Recommendations for Application of Power Semiconductor Devices of Power Semiconductor Devices of Different Manufacturers

 Please, note the following while applying power semiconductor devices of different manufacturers.........

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29.11.2007 | Mounting and Operation

 Mounting of thyristors or diodes (hereinafter - devices) should provide:

– good thermal and electrical contact with a heatsink or any other similar device (hereinafter - heatsink) at the whole temperature range..........

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29.11.2007 | Gate-drive Recommendations

 Requirements to waveform and parameters of gate current pulse, as well as to the gatedrive load-line. Thyristor is a bipolar semiconductor, controlled.........

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15.09.2006 | Series of Fast Thyristors with Controllable Reverse Recovery Charge

The new series of fast thyristors (current ratings range from 400A to 1250A, voltage ratings range from 300 to 3400V, turn-off time ratings range from 5 to 100 μs) with the guaranteed control of reverse recovery charge is submitted. Proton irradiation technology is applied to the control of the switching characteristics. The technological complex of proton irradiation allows to realize mass production of the mentioned thyristors as well as other high-voltage and fast devices including soft recovery diodes, IGBTs........
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